第50回 東大生研 表面科学研究会
日時： 2013年 7月 5日(金) 10:00-
場所： 東京大学生産技術研究所 As311,312
講演者: Petar Pervan 教授 (Institute of Physics, Zagreb, Croatia)
講演題目:「Doped or stretched: what can we learn from modified graphene on Ir surface?」
Epitaxial graphene on Ir(111) prepared in excellent structural quality appears to be an attractive model system for the investigation of intrinsic electronic properties of graphene. Photoelectron spectroscopy reveals linearly dispersing bands merging at the Fermi level (Dirac cone). Many of the desirable electronic properties of graphene are related to the linearity of its bands around Fermi level as well as the existence of energy gap which is missing in the intrinsic graphene. For that reason a lot of research efforts is directed towards manipulation of the electronic structure of Gr around the Fermi level.
We explored two possible routes to alter electronic properties of graphene which rely on modifying graphene by chemical doping or inducing a strain into the crystal lattice. We pursued these paths by intercalating Gr on Ir(111) by different alkali metals (Li, Na, K, Cs) and by creating Gr on top of a stepped Ir(332) surface. The modification of graphene was studied by the application of the Angle Resolved Photoelectron Spectroscopy (ARPES) , Low Electron Energy Diffraction and Microscopy (LEED, LEEM), Scanning Tunneling Microscopy (STM) . The systems are modeled by ab initio density functional theory (DFT).
A brief review of these studies will be presented and the most important results discussed in this talk.
聴講無料